FDB86360_F085
Manufacturer:
On Semiconductor
Mfr.Part #:
FDB86360_F085
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 333 W 80 V Continuous Drain Current (ID):110 A 253 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Weight | 1.31247 g |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 333 W |
| Power Dissipation | 333 W |
| Number of Channels | 1 |
| Input capacitance | 14.6 nF |
| Continuous Drain Current (ID) | 110 A |
| Rds On Max | 1.8 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| Turn-On Delay Time | 75 ns |
| Turn-Off Delay Time | 86 ns |
| Element Configuration | Single |
| Rise Time | 197 ns |
| Gate Charge | 253 nC |
| Drain to Source Resistance | 1.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| FET Type(Transistor Polarity) | N-Channel |
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